NTMFS4825NFET3G datasheet

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О ДАТАШИТЕ

• Маркировка
  NTMFS4825NFET3G
• Производитель
  ON Semiconductor
• Описание
  ON Semiconductor NTMFS4825NFET3G Configuration: Single Continuous Drain Current: 29 A Current - Continuous Drain (id) @ 25?° C: 17A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fall Time: 13 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 90 S Gate Charge (qg) @ Vgs: 40.2nC @ 4.5V Gate Charge Qg: 40.2 nC Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 5660pF @ 15V Maximum Operating Temperature: + 85 C Mounting Style: SMD/SMT Mounting Type: * Package / Case: * Power - Max: 950mW Power Dissipation: 2.74 W Rds On (max) @ Id, Vgs: 2 mOhm @ 22A, 10V Resistance Drain-source Rds (on): 1.3 mOhms Rise Time: 24 ns Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 1mA
• Количество страниц
  6 шт.
• Форматы файла
  HTML, PDF

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